| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 1952 |
2SA1399 |
SILICON PNP TRANSISTOR |
Isahaya Electronics Corporation |
| 1953 |
2SA1530A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1954 |
2SA1602 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE (SUPER MINI TYPE) |
Isahaya Electronics Corporation |
| 1955 |
2SA1928 |
SILICON PNP DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 1956 |
2SA1944 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1957 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1958 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1959 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 1960 |
2SA1947 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1961 |
2SA1948 |
SMALL-SIGNAL TRANSISTOR |
Isahaya Electronics Corporation |
| 1962 |
2SA1989 |
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
Isahaya Electronics Corporation |
| 1963 |
2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 1964 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 1965 |
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 1966 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 1967 |
2SA2027 |
SILICON EPITAXIAL TRANSISTOR |
Isahaya Electronics Corporation |
| 1968 |
2SA2068 |
SMALL-SIGNAL TRANSISTOR |
Isahaya Electronics Corporation |
| 1969 |
2SA2068E |
SMALL-SIGNAL TRANSISTOR |
Isahaya Electronics Corporation |
| 1970 |
2SA2068F |
SMALL-SIGNAL TRANSISTOR |
Isahaya Electronics Corporation |
| 1971 |
2SA2068G |
SMALL-SIGNAL TRANSISTOR |
Isahaya Electronics Corporation |
| 1972 |
2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 |
Isahaya Electronics Corporation |
| 1973 |
2SB1314 |
2W Lead frame PNP transistor, maximum rating: -60V Vceo, -3A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 1974 |
2SB1314 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION |
Mitsubishi Electric Corporation |
| 1975 |
2SC1324 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 1976 |
2SC1729 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1977 |
2SC1944 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1978 |
2SC1945 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1979 |
2SC1946 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1980 |
2SC1946A |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
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