No. |
Part Name |
Description |
Manufacturer |
1951 |
K4S643232F-TL60 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1952 |
K4S643232F-TL70 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1953 |
K4S643232F-TP60 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V |
Samsung Electronic |
1954 |
K4S643232F-TP70 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V |
Samsung Electronic |
1955 |
K4S643233E-SE(N) |
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet |
Samsung Electronic |
1956 |
K4S643234E-S(T) |
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet |
Samsung Electronic |
1957 |
KM41256AJ-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
1958 |
KM41256AJ-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
1959 |
KM41256AJ-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
1960 |
KM41256AP-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
1961 |
KM41256AP-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
1962 |
KM41256AP-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
1963 |
KM41256AZ-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
1964 |
KM41256AZ-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
1965 |
KM41256AZ-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
1966 |
KM416C1004BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
1967 |
KM416C1004BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
1968 |
KM416C1004BJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
1969 |
KM416C1004BJ-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
1970 |
KM416C1004BJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
1971 |
KM416C1004BJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
1972 |
KM416C1004BJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
1973 |
KM416C1004BJ-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
1974 |
KM416C1004BT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
1975 |
KM416C1004BT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
1976 |
KM416C1004BT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
1977 |
KM416C1004BT-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
1978 |
KM416C1004BT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
1979 |
KM416C1004BT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
1980 |
KM416C1004BT-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
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