| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
NTE6027 |
Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A. |
NTE Electronics |
| 1952 |
NTE6031 |
Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 300V. Max average forward current 60A. |
NTE Electronics |
| 1953 |
NTE6035 |
Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 400V. Max average forward current 60A. |
NTE Electronics |
| 1954 |
NTE6039 |
Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 500V. Max average forward current 60A. |
NTE Electronics |
| 1955 |
NTE6041 |
Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 600V. Max average forward current 60A. |
NTE Electronics |
| 1956 |
NTE6043 |
Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 800V. Max average forward current 60A. |
NTE Electronics |
| 1957 |
NTE6049 |
Industrial silicon recfifier. Anode to case. Max peak reverse voltage 50V. Max forward current 70A. |
NTE Electronics |
| 1958 |
NTE6051 |
Industrial silicon recfifier. Anode to case. Max peak reverse voltage 100V. Max forward current 70A. |
NTE Electronics |
| 1959 |
NTE6055 |
Industrial silicon recfifier. Anode to case. Max peak reverse voltage 200V. Max forward current 70A. |
NTE Electronics |
| 1960 |
NTE6059 |
Industrial silicon recfifier. Anode to case. Max peak reverse voltage 300V. Max forward current 70A. |
NTE Electronics |
| 1961 |
NTE6061 |
Industrial silicon recfifier. Anode to case. Max peak reverse voltage 400V. Max forward current 70A. |
NTE Electronics |
| 1962 |
NTE6065 |
Industrial silicon recfifier. Anode to case. Max peak reverse voltage 600V. Max forward current 70A. |
NTE Electronics |
| 1963 |
NTE6069 |
Industrial silicon recfifier. Anode to case. Max peak reverse voltage 800V. Max forward current 70A. |
NTE Electronics |
| 1964 |
NTE6071 |
Stud mount recfifier. Anode to case. Peak reverse voltage 1600V. Max forward current 85A. |
NTE Electronics |
| 1965 |
NTE6075 |
Stud mount recfifier. Anode to case. Peak reverse voltage 200V. Max forward current 85A. |
NTE Electronics |
| 1966 |
NTE6077 |
Stud mount recfifier. Anode to case. Peak reverse voltage 600V. Max forward current 85A. |
NTE Electronics |
| 1967 |
NTE6103 |
Industrial rectifier, 550A. Anode to case. Repetitive peak reverse voltae 600V. |
NTE Electronics |
| 1968 |
NTE6105 |
Industrial rectifier, 550A. Anode to case. Repetitive peak reverse voltae 1200V. |
NTE Electronics |
| 1969 |
NTE6155 |
Silicon industrial rectifier, 150 Amp, general purpose. Anode to case. Peak revrese voltage 400V. |
NTE Electronics |
| 1970 |
NTE6157 |
Silicon industrial rectifier, 150 Amp, general purpose. Anode to case. Peak revrese voltage 600V. |
NTE Electronics |
| 1971 |
NTE6159 |
Silicon industrial rectifier, 150 Amp, general purpose. Anode to case. Peak revrese voltage 1000V. |
NTE Electronics |
| 1972 |
NTE6163 |
Silicon industrial rectifier, 150 Amp, general purpose. Anode to case. Peak revrese voltage 1400V. |
NTE Electronics |
| 1973 |
NTE6202 |
Positive center tapped silicon rectifier, standard recovery. Peak repetitive reverse voltage 400V. Average forward current(per diode) 15A. |
NTE Electronics |
| 1974 |
NTE6206 |
Positive center tapped silicon rectifier, fast recovery. Peak repetitive reverse voltage 200V. Average forward current(per diode) 15A. |
NTE Electronics |
| 1975 |
NTE6208 |
Positive center tapped silicon rectifier, fast recovery. Peak repetitive reverse voltage 400V. Average forward current(per diode) 15A. |
NTE Electronics |
| 1976 |
NX8562LB279-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1527.99 nm. Frequency 196.20 THz. Anode ground. FC-PC connector. |
NEC |
| 1977 |
NX8562LB287-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1528.77 nm. Frequency 196.10 THz. Anode ground. FC-PC connector. |
NEC |
| 1978 |
NX8562LB295-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. Anode ground. FC-PC connector. |
NEC |
| 1979 |
NX8562LB303-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. Anode ground. FC-PC connector. |
NEC |
| 1980 |
NX8562LB311-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. Anode ground. FC-PC connector. |
NEC |
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