| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
NJU7231 |
HIGH PRECISION C-MOS 3-TERMINAL VOLTAGE REGULATOR |
New Japan Radio |
| 1952 |
NLAS52231 |
Analog Switch, Dual SPDT, Ultra-Low Ron, 0.4 Ω |
ON Semiconductor |
| 1953 |
NR231CTA |
Accessories - Steel nickel plated |
SGS-ATES |
| 1954 |
NTE1231 |
Integrated Circuit Complete 4 Watt TV Sound Channel |
NTE Electronics |
| 1955 |
NTE1231A |
Integrated Circuit Complete 4 Watt TV Sound Channel |
NTE Electronics |
| 1956 |
NTE2304 |
Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314) |
NTE Electronics |
| 1957 |
NTE231 |
Silicon Controlled Rectifier (SCR) TV Deflection Circuit |
NTE Electronics |
| 1958 |
NTE2310 |
Silicon NPN Transistor High Voltage, High Speed Switch |
NTE Electronics |
| 1959 |
NTE2311 |
Silicon NPN Transistor High Voltage, High Speed Switch |
NTE Electronics |
| 1960 |
NTE2312 |
Silicon NPN Transistor High Voltage, High Speed Switch |
NTE Electronics |
| 1961 |
NTE2313 |
Silicon NPN Transistor High Speed Switch |
NTE Electronics |
| 1962 |
NTE2314 |
Silicon PNP Transistor High Current, High Speed Switch (Compl to NTE2304) |
NTE Electronics |
| 1963 |
NTE2315 |
Silicon NPN Transistor Fast Switching Power Darlington |
NTE Electronics |
| 1964 |
NTE2316 |
Silicon NPN Transistor Fast Switching Power Darlington |
NTE Electronics |
| 1965 |
NTE2317 |
Silicon NPN Transistor High Voltage Fast Switching Power Darlington |
NTE Electronics |
| 1966 |
NTE2318 |
Silicon NPN Transistor High Voltage, High Speed Switch |
NTE Electronics |
| 1967 |
NTE2319 |
Silicon NPN Transistor High Voltage, High Speed Power Switch |
NTE Electronics |
| 1968 |
NTE5231A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 190V. Zener test current Izt = 13mA. |
NTE Electronics |
| 1969 |
OL2311AHN |
Highly integrated single-chip sub 1-GHz RF receiver |
NXP Semiconductors |
| 1970 |
OM6231SS |
400V Dual N-Channel MOSFET in a S-6E package |
International Rectifier |
| 1971 |
OM6231SS |
400V N-channel MOSFET |
Omnirel |
| 1972 |
OP231 |
GaAs hermetic infrared emitting diode |
Optek Technology |
| 1973 |
OP231TX |
High reliability GaAlAs infrared emitting diode. |
Optek Technology |
| 1974 |
OP231TXV |
High reliability GaAlAs infrared emitting diode. |
Optek Technology |
| 1975 |
OP231W |
GaAs hermetic infrared emitting diode |
Optek Technology |
| 1976 |
OPA2313 |
1-MHz, Micropower, Low-Noise, Rail-to-Rail I/O 1.8-V Operational Amplifier |
Texas Instruments |
| 1977 |
OPA2313ID |
1-MHz, Micropower, Low-Noise, Rail-to-Rail I/O 1.8-V Operational Amplifier 8-SOIC -40 to 125 |
Texas Instruments |
| 1978 |
OPA2313IDGK |
1-MHz, Micropower, Low-Noise, Rail-to-Rail I/O 1.8-V Operational Amplifier 8-VSSOP -40 to 125 |
Texas Instruments |
| 1979 |
OPA2313IDGKR |
1-MHz, Micropower, Low-Noise, Rail-to-Rail I/O 1.8-V Operational Amplifier 8-VSSOP -40 to 125 |
Texas Instruments |
| 1980 |
OPA2313IDR |
1-MHz, Micropower, Low-Noise, Rail-to-Rail I/O 1.8-V Operational Amplifier 8-SOIC -40 to 125 |
Texas Instruments |
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