No. |
Part Name |
Description |
Manufacturer |
1951 |
NBC12429FNR2 |
3.3V / 5V Programmable PLL Synthesized Clock Generator (25 to 400 MHz) |
ON Semiconductor |
1952 |
NCV4290 |
450 mA Low Dropout Voltage Regulator with Power Good and Delay |
ON Semiconductor |
1953 |
NCV4299 |
Linear Voltage Regulator, LDO, 150 mA |
ON Semiconductor |
1954 |
NCV4299A |
Linear Voltage Regulator, LDO, 150 mA |
ON Semiconductor |
1955 |
NE429M01 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
1956 |
NE429M01-T1 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
1957 |
NE429M01-T2 |
N-channel HJ-FET |
NEC |
1958 |
NJU6429 |
12-character 2-line Dot Matrix LCD Controller Driver |
New Japan Radio |
1959 |
NJU6429FC1 |
12-character 2-line dot matrix LCD controller driver |
New Japan Radio |
1960 |
NJU6429FG1 |
12-character 2-line dot matrix LCD controller driver |
New Japan Radio |
1961 |
NJU6429XFC1 |
12-CHARACTER 2-LINE DOT MATRIX LCD CONTROLLER DRIVER |
New Japan Radio |
1962 |
NKT12429 |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
1963 |
NKT13429 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
1964 |
NST6429 |
Small Signal NPN |
ON Semiconductor |
1965 |
NST6429 |
Small Signal NPN |
ON Semiconductor |
1966 |
NSVS614 |
429.42 MHZ SPECIFIED LOW POWER RADIO STATION |
New Japan Radio |
1967 |
NTE2429 |
Silicon complementary PNP transistor. General purpose switch. |
NTE Electronics |
1968 |
NTE5429 |
Silicon Controlled Rectifier (SCR) 7 Amp |
NTE Electronics |
1969 |
NX8560LJ429-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1542.91 nm. Frequency 194.30 THz. FC-UPC connector. |
NEC |
1970 |
NX8560LJ429-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1542.91 nm. Frequency 194.30 THz. SC-UPC connector. |
NEC |
1971 |
NX8560SJ354-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1535.429 nm. Frequency 195.25 THz. FC-UPC connector. |
NEC |
1972 |
NX8560SJ354-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1535.429 nm. Frequency 195.25 THz. SC-UPC connector. |
NEC |
1973 |
NX8560SJ429-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1542.936 nm. Frequency 194.30 THz. FC-UPC connector. |
NEC |
1974 |
NX8560SJ429-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1542.936 nm. Frequency 194.30 THz. SC-UPC connector. |
NEC |
1975 |
NX8562LB429-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1542.93 nm. Frequency 194.30 THz. Anode ground. FC-PC connector. |
NEC |
1976 |
NX8562LF429-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1542.93 nm. Frequency 194.30 THz. Anode floating. FC-PC connector. |
NEC |
1977 |
NX8563LA429-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1542.93 nm. Frequency 194.30 THz. SC-UPC. |
NEC |
1978 |
NX8563LA429-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1542.93 nm. Frequency 194.30 THz. SC-APC. |
NEC |
1979 |
NX8563LAS429-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1542.93 nm. Frequency 194.30 THz. SC-UPC. |
NEC |
1980 |
NX8563LAS429-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1542.93 nm. Frequency 194.30 THz. SC-APC. |
NEC |
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