| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
MX7821KR+T |
µP-Compatible, 660ns, 8-Bit ADC with Track/Hold |
MAXIM - Dallas Semiconductor |
| 1952 |
MX7821TE |
660ns ��P-Compatible, 8-Bit ADC with Track/Hold |
MAXIM - Dallas Semiconductor |
| 1953 |
MX7821TQ |
660ns ��P-Compatible, 8-Bit ADC with Track/Hold |
MAXIM - Dallas Semiconductor |
| 1954 |
NCV8660 |
Linear Voltage Regulator, LDO, Very Low Iq, 150 mA, with Reset and Delay |
ON Semiconductor |
| 1955 |
NCV8660B |
Linear Voltage Regulator, LDO, Very Low Iq, 150 mA, with Reset and Delay |
ON Semiconductor |
| 1956 |
NE56604-42 |
System reset with built-in watchdog timer |
Philips |
| 1957 |
NE56604-42D |
System reset with built-in Watchdog timer |
Philips |
| 1958 |
NE56605-42 |
System reset with built-in watchdog timer |
Philips |
| 1959 |
NE56605-42D |
System reset with built-in watchdog timer, 4.2V |
Philips |
| 1960 |
NJU7660 |
VOLTAGE CONVERTER |
New Japan Radio |
| 1961 |
NJU7660D |
VOLTAGE CONVERTER |
New Japan Radio |
| 1962 |
NJU7660M |
VOLTAGE CONVERTER |
New Japan Radio |
| 1963 |
NJU7660V |
VOLTAGE CONVERTER |
New Japan Radio |
| 1964 |
NOII4SM6600A |
6.6 Megapixel CMOS Image Sensor |
ON Semiconductor |
| 1965 |
NTD6600N |
Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK |
ON Semiconductor |
| 1966 |
NTE5261AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 19.0V. Zener test current Izt = 660mA. |
NTE Electronics |
| 1967 |
NTE5822 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V. |
NTE Electronics |
| 1968 |
NTE5823 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V. |
NTE Electronics |
| 1969 |
NTMD6601N |
80V 2.2A DUAL N-CHANNEL SO8 |
ON Semiconductor |
| 1970 |
NX7660JC |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
NEC |
| 1971 |
NX7660JC |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 1972 |
NX7660JC |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 1973 |
NX7660JC-BA |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
NEC |
| 1974 |
NX7660JC-CA |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
NEC |
| 1975 |
NZT660 |
PNP Low Saturation Transistor |
Fairchild Semiconductor |
| 1976 |
NZT660A |
PNP Low Saturation Transistor |
Fairchild Semiconductor |
| 1977 |
NZT660A_NL |
PNP Low Saturation Transistor |
Fairchild Semiconductor |
| 1978 |
OM5721 |
STB5660 Set-Top Box STB concept |
Philips |
| 1979 |
OM5721_C1 |
STB5660 (Set-Top Box) STB concept |
Philips |
| 1980 |
OPA660 |
Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER |
Burr Brown |
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