| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
IS42S32200B-7TI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 1952 |
IS42S32200B-7TL |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 1953 |
IS42S32200B-7TLI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 1954 |
K4E151611 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1955 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1956 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1957 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1958 |
K4E151612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1959 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1960 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1961 |
K4E16(7)0411(2)D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 1962 |
K4E16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 1963 |
K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1964 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1965 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1966 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1967 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1968 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1969 |
K4E160811D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1970 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1971 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1972 |
K4E160812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1973 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1974 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1975 |
K4E170411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1976 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1977 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1978 |
K4E170412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1979 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1980 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
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