No. |
Part Name |
Description |
Manufacturer |
1951 |
IRF840 |
PowerMOS transistor Avalanche energy rated |
Philips |
1952 |
IRFP460 |
PowerMOS transistors Avalanche energy rated |
Philips |
1953 |
IRFR9020 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
1954 |
IRFR9020 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
1955 |
IRFR9022 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
1956 |
IRFU9020 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
1957 |
IRFU9022 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
1958 |
IRHM3160 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
International Rectifier |
1959 |
IRHM4160 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
International Rectifier |
1960 |
IS6MC256K-50 |
256KB CMOS 3.1 COASt cache module for the intel pentium CPU |
Integrated Silicon Solution Inc |
1961 |
IS6MC256K-60 |
256KB CMOS 3.1 COASt cache module for the intel pentium CPU |
Integrated Silicon Solution Inc |
1962 |
IS6MC256K-66 |
256KB CMOS 3.1 COASt cache module for the intel pentium CPU |
Integrated Silicon Solution Inc |
1963 |
ISL9V2040D3ST |
10A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT |
Fairchild Semiconductor |
1964 |
ISL9V2040S3ST |
10A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT |
Fairchild Semiconductor |
1965 |
ISL9V3036D3ST |
17A, 360V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT |
Fairchild Semiconductor |
1966 |
ISL9V3036S3ST |
17A, 360V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT |
Fairchild Semiconductor |
1967 |
ISL9V3040D3ST |
17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT |
Fairchild Semiconductor |
1968 |
ISL9V3040S3ST |
17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT |
Fairchild Semiconductor |
1969 |
ISL9V5036S3 |
31A, 360V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT |
Fairchild Semiconductor |
1970 |
IXFR10N100Q |
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances |
IXYS Corporation |
1971 |
IXTH10P50 |
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |
IXYS Corporation |
1972 |
IXTH11P50 |
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |
IXYS Corporation |
1973 |
IXTH7P50 |
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |
IXYS Corporation |
1974 |
IXTH8P50 |
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |
IXYS Corporation |
1975 |
IXTT10P50 |
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |
IXYS Corporation |
1976 |
IXTT11P50 |
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |
IXYS Corporation |
1977 |
JAN1N3821C-1 |
Low Voltage Avalanche Zener |
Microsemi |
1978 |
JAN1N3821D-1 |
Low Voltage Avalanche Zener |
Microsemi |
1979 |
JAN1N3822C-1 |
Low Voltage Avalanche Zener |
Microsemi |
1980 |
JAN1N3822D-1 |
Low Voltage Avalanche Zener |
Microsemi |
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