| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
10SI2R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 200V |
IPRS Baneasa |
| 1952 |
10SI3 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 1953 |
10SI3 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 300V |
IPRS Baneasa |
| 1954 |
10SI3R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 1955 |
10SI3R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 300V |
IPRS Baneasa |
| 1956 |
10SI4 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 1957 |
10SI4 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 400V |
IPRS Baneasa |
| 1958 |
10SI4R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 1959 |
10SI4R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 400V |
IPRS Baneasa |
| 1960 |
10SI5 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 1961 |
10SI5 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 500V |
IPRS Baneasa |
| 1962 |
10SI5R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 1963 |
10SI5R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 500V |
IPRS Baneasa |
| 1964 |
10SI6 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 1965 |
10SI6 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V |
IPRS Baneasa |
| 1966 |
10SI6R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 1967 |
10SI6R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 600V |
IPRS Baneasa |
| 1968 |
10SI7 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 700V |
IPRS Baneasa |
| 1969 |
10SI7R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 700V |
IPRS Baneasa |
| 1970 |
10SI8 |
Silicon rectifier diode |
IPRS Baneasa |
| 1971 |
10SI8 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 800V |
IPRS Baneasa |
| 1972 |
10SI8R |
Silicon rectifier diode |
IPRS Baneasa |
| 1973 |
10SI8R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 800V |
IPRS Baneasa |
| 1974 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 1975 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 1976 |
10TQ030 |
Diode Schottky 35V 10A 2-Pin(2+Tab) TO-220AC |
New Jersey Semiconductor |
| 1977 |
10TQ035 |
35V 10A Schottky Discrete Diode in a TO-220AC package |
International Rectifier |
| 1978 |
10TQ035 |
Diode Schottky 35V 10A 2-Pin(2+Tab) TO-220AC |
New Jersey Semiconductor |
| 1979 |
10TQ035S |
35V 10A Schottky Discrete Diode in a D2-Pak package |
International Rectifier |
| 1980 |
10TQ035STRL |
35V 10A Schottky Discrete Diode in a D2-Pak package |
International Rectifier |
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