| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
R7S21009 |
Fast Recovery Rectifier (900Amperes Average 1600 Volts) |
Powerex Power Semiconductors |
| 1952 |
R7S21010 |
Fast Recovery Rectifier (1000Amperes Average 1600 Volts) |
Powerex Power Semiconductors |
| 1953 |
R7S21209 |
Fast Recovery Rectifier (900Amperes Average 1600 Volts) |
Powerex Power Semiconductors |
| 1954 |
R7S21210 |
Fast Recovery Rectifier (1000Amperes Average 1600 Volts) |
Powerex Power Semiconductors |
| 1955 |
R7S21409 |
Fast Recovery Rectifier (900Amperes Average 1600 Volts) |
Powerex Power Semiconductors |
| 1956 |
R7S21410 |
Fast Recovery Rectifier (1000Amperes Average 1600 Volts) |
Powerex Power Semiconductors |
| 1957 |
R7S21609 |
Fast Recovery Rectifier (900Amperes Average 1600 Volts) |
Powerex Power Semiconductors |
| 1958 |
R7S21610 |
Fast Recovery Rectifier (1000Amperes Average 1600 Volts) |
Powerex Power Semiconductors |
| 1959 |
R9G02200A |
General Purpose Rectifier (2200 Amperes Average 1600 Volts) |
Powerex Power Semiconductors |
| 1960 |
S3C3410X |
High Performance 16-bit MCU for Genenral Purpose |
Samsung Electronic |
| 1961 |
S3C3410X |
High Performance 16-bit MCU for Genenral Purpose |
Samsung Electronic |
| 1962 |
S3C3410X |
High Performance 16-bit MCU for Genenral Purpose |
Samsung Electronic |
| 1963 |
S3C3410X |
High Performance 16-bit MCU for Genenral Purpose |
Samsung Electronic |
| 1964 |
S3C3410X(KS17C40100) |
High Performance 16-bit MCU for Genenral Purpose User's Manual |
Samsung Electronic |
| 1965 |
S3C3410X(KS17C40100) |
High Performance 16-bit MCU for Genenral Purpose Application Note |
Samsung Electronic |
| 1966 |
SAB 80C166W-M-T4 |
General Purpose 16-Bit Microcontroller (80C166 is DISCONTINUED !) |
Infineon |
| 1967 |
SAB80C166-3S |
HIGH-PERFORMANCE 16-BIT CMOS SINGLE-CHIP MICROCONTROLLERS FOR EMBEDDED CONTROL APPLICATIONS |
Siemens |
| 1968 |
SAB80C166-S |
HIGH-PERFORMANCE 16-BIT CMOS SINGLE-CHIP MICROCONTROLLERS FOR EMBEDDED CONTROL APPLICATIONS |
Siemens |
| 1969 |
SAB83C166-3S |
High-performance 16-bit CMOS single-chip microcontroller for embedded contol applications. 16-bit microcontroller with 8K mask-programmable ROM. |
Siemens |
| 1970 |
SMAJ160C |
400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1971 |
SMAJ160CA |
400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1972 |
SMBJ150C |
Surface mount transient voltage suppressor. Breakdown voltage 167 V (min), 204 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 1973 |
SMBJ150CA |
Surface mount transient voltage suppressor. Breakdown voltage 167 V (min), 185 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 1974 |
SMBJ5930A |
1.5W silicon surface mount zener diode. Zener voltage 16 V. Test current 23.4 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1975 |
SMBJ5930B |
1.5W silicon surface mount zener diode. Zener voltage 16 V. Test current 23.4 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 1976 |
SMBJ5930C |
1.5W silicon surface mount zener diode. Zener voltage 16 V. Test current 23.4 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 1977 |
SMBJ5930D |
1.5W silicon surface mount zener diode. Zener voltage 16 V. Test current 23.4 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 1978 |
SMBJ5954A |
1.5W silicon surface mount zener diode. Zener voltage 160 V. Test current 2.3 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1979 |
SMBJ5954B |
1.5W silicon surface mount zener diode. Zener voltage 160 V. Test current 2.3 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 1980 |
SMBJ5954C |
1.5W silicon surface mount zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
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