| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
BFP520 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
| 1952 |
BFP81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
Siemens |
| 1953 |
BFQ23 |
Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain |
Philips |
| 1954 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 1955 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
| 1956 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
| 1957 |
BFQ63 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers |
Philips |
| 1958 |
BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications) |
Siemens |
| 1959 |
BFQ81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) |
Siemens |
| 1960 |
BFR16 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 1961 |
BFR16 |
Transistor for general purpose amplifiers |
SGS-ATES |
| 1962 |
BFR17 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 1963 |
BFR17 |
Transistor for general purpose amplifiers |
SGS-ATES |
| 1964 |
BFR18 |
Transistor for general purpose amplifiers |
SGS-ATES |
| 1965 |
BFR19 |
Transistor for general purpose amplifiers |
SGS-ATES |
| 1966 |
BFR20 |
Transistor for general purpose amplifiers |
SGS-ATES |
| 1967 |
BFR21 |
Transistor for general purpose amplifiers |
SGS-ATES |
| 1968 |
BFR340F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators |
Infineon |
| 1969 |
BFR340L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 1970 |
BFR340T |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Noise Amplifiers and Oscillators |
Infineon |
| 1971 |
BFR460L3E6327 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 1972 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 1973 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 1974 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
| 1975 |
BFS460L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 1976 |
BFS466L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 1977 |
BFS469L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 1978 |
BFW43 |
HIGH VOLTAGE AMPLIFIER |
SGS Thomson Microelectronics |
| 1979 |
BFW43 |
Transistor for general purpose amplifiers |
SGS-ATES |
| 1980 |
BFW43 |
HIGH VOLTAGE AMPLIFIER |
ST Microelectronics |
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