No. |
Part Name |
Description |
Manufacturer |
1951 |
BCM4317 |
AirForce One Single-Chip 802.11b Transceiver |
Broadcom |
1952 |
BCM4317 |
AirForce One Single-Chip 802.11b Transceiver |
Broadcom |
1953 |
BD201 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 60W. |
General Electric Solid State |
1954 |
BD201 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS |
General Semiconductor |
1955 |
BD202 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 60W. |
General Electric Solid State |
1956 |
BD202 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS |
General Semiconductor |
1957 |
BD203 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 60W. |
General Electric Solid State |
1958 |
BD203 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS |
General Semiconductor |
1959 |
BD204 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 60W. |
General Electric Solid State |
1960 |
BD204 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS |
General Semiconductor |
1961 |
BD232 |
N-P-N High Voltage Silicon Transistor |
Mullard |
1962 |
BD240 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 30W. |
General Electric Solid State |
1963 |
BD240A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. |
General Electric Solid State |
1964 |
BD240B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. |
General Electric Solid State |
1965 |
BD240C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 30W. |
General Electric Solid State |
1966 |
BD241 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. |
General Electric Solid State |
1967 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
1968 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
1969 |
BD241C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. |
General Electric Solid State |
1970 |
BD242 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 40W. |
General Electric Solid State |
1971 |
BD242A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. |
General Electric Solid State |
1972 |
BD242B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. |
General Electric Solid State |
1973 |
BD242C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. |
General Electric Solid State |
1974 |
BD243 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 65W. |
General Electric Solid State |
1975 |
BD243A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. |
General Electric Solid State |
1976 |
BD243B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
General Electric Solid State |
1977 |
BD243C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. |
General Electric Solid State |
1978 |
BD244 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 65W. |
General Electric Solid State |
1979 |
BD244A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W. |
General Electric Solid State |
1980 |
BD244B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. |
General Electric Solid State |
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