No. |
Part Name |
Description |
Manufacturer |
1951 |
2N2027 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1952 |
2N2028 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1953 |
2N2029 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1954 |
2N2030 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1955 |
2N3091 |
110 AMP RMS SCRS |
International Rectifier |
1956 |
2N3092 |
110 AMP RMS SCRS |
International Rectifier |
1957 |
2N3093 |
110 AMP RMS SCRS |
International Rectifier |
1958 |
2N3094 |
110 AMP RMS SCRS |
International Rectifier |
1959 |
2N3095 |
110 AMP RMS SCRS |
International Rectifier |
1960 |
2N3096 |
110 AMP RMS SCRS |
International Rectifier |
1961 |
2N3097 |
110 AMP RMS SCRS |
International Rectifier |
1962 |
2N3098 |
110 AMP RMS SCRS |
International Rectifier |
1963 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1964 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1965 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1966 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1967 |
2N5071 |
24W(CW), 76-MHz Emiter-Balasted Overlay RF Power Transistor |
RCA Solid State |
1968 |
2N5204 |
600V 22A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
1969 |
2N5205 |
800V 22A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
1970 |
2N5206 |
1000V 22A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
1971 |
2N5207 |
1200V 22A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
1972 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
1973 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
1974 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
1975 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
1976 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
1977 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
1978 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
1979 |
2N6265 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
1980 |
2N6266 |
5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor |
RCA Solid State |
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