| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1952 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1953 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 1954 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 1955 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 1956 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 1957 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 1958 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 1959 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 1960 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 1961 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1962 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 1963 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
| 1964 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 1965 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1966 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1967 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1968 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1969 |
BF543 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
| 1970 |
BF987 |
Silicon N-Channel MOSFET Triode |
Infineon |
| 1971 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
| 1972 |
BF994 |
Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners) |
Siemens |
| 1973 |
BF994S |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) |
Siemens |
| 1974 |
BF995 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) |
Siemens |
| 1975 |
BF996S |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
| 1976 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 1977 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 1978 |
BF998R |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 1979 |
BF998W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 1980 |
BF998W |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
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