| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
UPC1678G-E2 |
Silicon middle-power output high frequency wide-band amplifier |
NEC |
| 1952 |
UPC1678P |
Silicon middle-power output high frequency wide-band amplifier |
NEC |
| 1953 |
UPC1694 |
GENERAL PURPOSE HIGH FREQUENCY WIDEBAND IC FOR FREQUENCY DOWN-CONVERTER |
NEC |
| 1954 |
UPC1694GR |
GENERAL PURPOSE HIGH FREQUENCY WIDEBAND IC FOR FREQUENCY DOWN-CONVERTER |
NEC |
| 1955 |
UPC1694GR-E1 |
GENERAL PURPOSE HIGH FREQUENCY WIDEBAND IC FOR FREQUENCY DOWN-CONVERTER |
NEC |
| 1956 |
UPC2776T-E3 |
IC for middle output high frequency wide band amplifier |
NEC |
| 1957 |
UTC2SC1815 |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
Unisonic Technologies |
| 1958 |
UX-A5B |
High Frequency High Voltage Rectifier Diodes |
Sanken |
| 1959 |
UX-G5B |
High Frequency High Voltage Rectifier Diodes |
Sanken |
| 1960 |
VFC110 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 1961 |
VFC110AG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 1962 |
VFC110AG2 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 1963 |
VFC110AP |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 1964 |
VFC110APG4 |
High Frequency Voltage-to-Frequency Converter 14-PDIP |
Texas Instruments |
| 1965 |
VFC110BG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 1966 |
VFC110BG1 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 1967 |
VFC110SG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 1968 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1969 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1970 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1971 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1972 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1973 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1974 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1975 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1976 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1977 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1978 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1979 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1980 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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