| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
1N5349A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 1952 |
1N5349A |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 1953 |
1N5349B |
5 Watt Surmetic 40 Silicon Zener Diodes |
Boca Semiconductor Corporation |
| 1954 |
1N5349B |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 1955 |
1N5349B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1956 |
1N5349B |
5W SILICON ZENER DIODES |
ST Microelectronics |
| 1957 |
1N5349B |
12 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1958 |
1N5349B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1959 |
1N5350 |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 1960 |
1N5350A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 1961 |
1N5350A |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 1962 |
1N5350B |
5 Watt Surmetic 40 Silicon Zener Diodes |
Boca Semiconductor Corporation |
| 1963 |
1N5350B |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 1964 |
1N5350B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1965 |
1N5350B |
5W SILICON ZENER DIODES |
ST Microelectronics |
| 1966 |
1N5350B |
13 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1967 |
1N5350B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1968 |
1N5351 |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 1969 |
1N5351A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 1970 |
1N5351A |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 1971 |
1N5351B |
5 Watt Surmetic 40 Silicon Zener Diodes |
Boca Semiconductor Corporation |
| 1972 |
1N5351B |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 1973 |
1N5351B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1974 |
1N5351B |
5W SILICON ZENER DIODES |
ST Microelectronics |
| 1975 |
1N5351B |
14 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1976 |
1N5351B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1977 |
1N5352 |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 1978 |
1N5352A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 1979 |
1N5352A |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 1980 |
1N5352B |
5 Watt Surmetic 40 Silicon Zener Diodes |
Boca Semiconductor Corporation |
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