No. |
Part Name |
Description |
Manufacturer |
1951 |
AOT280A60L |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1952 |
AOT600A70L |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1953 |
AOT66920L |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1954 |
AOTF280A60L |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1955 |
AOTF409 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1956 |
AOTF4185 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1957 |
AOTF600A60L |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1958 |
AOTF66920L |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1959 |
AOUS66920 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1960 |
AOWF600A70F |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1961 |
AOY423 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1962 |
AOY66920 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
1963 |
AT5801 |
4-channel motor driver for portable CD player |
Aimtron |
1964 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1965 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1966 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
1967 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
1968 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
1969 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
1970 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
1971 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
1972 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
1973 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
1974 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1975 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
1976 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
1977 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
1978 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
1979 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
1980 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
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