| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 1952 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1953 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1954 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1955 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1956 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1957 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1958 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1959 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1960 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1961 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1962 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1963 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1964 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1965 |
3N216 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1966 |
3N217 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1967 |
3NH41 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPLY APPLICATIONS) |
TOSHIBA |
| 1968 |
3NH41 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPLY APPLICATIONS) |
TOSHIBA |
| 1969 |
3SK126 |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) |
TOSHIBA |
| 1970 |
3SK127 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) |
TOSHIBA |
| 1971 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
| 1972 |
3SK151 |
N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER/ VHF RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1973 |
3SK153 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1974 |
3SK195 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications FM Tuner Applications |
TOSHIBA |
| 1975 |
3SK199 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications |
TOSHIBA |
| 1976 |
3SK202 |
Field-effect Transistor - Silicon N Channel 4-pole MOS Type - For VHF band high-gain low-noise amplification |
Panasonic |
| 1977 |
3SK207 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
| 1978 |
3SK20H |
Silicon N-CHANNEL MOS Type FET Transistor, High Input Impedance Pre-Amplifier |
Hitachi Semiconductor |
| 1979 |
3SK21H |
Silicon N-Channel MOS Type FET Transistor, intended for use in Chopper |
Hitachi Semiconductor |
| 1980 |
3SK225 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
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