| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
1N4153 |
50 V, 500 mW high speed diode |
BKC International Electronics |
| 1982 |
1N4153 |
SMALL SIGNAL SWITCHING DIODE |
Chenyi Electronics |
| 1983 |
1N4153 |
SILICON EPITAXIAL PLANAR DIODES |
GOOD-ARK Electronics |
| 1984 |
1N4153 |
SMALL SIGNAL SWITCHING DIODE |
Shanghai Sunrise Electronics |
| 1985 |
1N4153 |
Silicon Diode Whiskerless |
Transitron Electronic |
| 1986 |
1N4153-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 1987 |
1N4154 |
25 V, 500 mW high speed diode |
BKC International Electronics |
| 1988 |
1N4154 |
SMALL SIGNAL SWITCHING DIODE |
Chenyi Electronics |
| 1989 |
1N4154 |
SILICON EPITAXIAL PLANAR DIODES |
GOOD-ARK Electronics |
| 1990 |
1N4154 |
SMALL SIGNAL SWITCHING DIODE |
Shanghai Sunrise Electronics |
| 1991 |
1N4154 |
Silicon Diode Whiskerless |
Transitron Electronic |
| 1992 |
1N4154-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 1993 |
1N417 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1994 |
1N418 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1995 |
1N419 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1996 |
1N429 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USAF/JAN |
Transitron Electronic |
| 1997 |
1N4305 |
50 V, 500 mW ultra fast low capacitance diode |
BKC International Electronics |
| 1998 |
1N4305 |
Silicon Diode Whiskerless |
Transitron Electronic |
| 1999 |
1N432 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 2000 |
1N434 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 2001 |
1N4370 |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-10% standard tolerance. |
Jinan Gude Electronic Device |
| 2002 |
1N4370 |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.4V |
Transitron Electronic |
| 2003 |
1N4370A |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 2004 |
1N4370A |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.4V, tolerance ±5% |
Transitron Electronic |
| 2005 |
1N4370C |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2006 |
1N4370D |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2007 |
1N4371 |
500mW SILICON ZENER DIODES |
Jinan Gude Electronic Device |
| 2008 |
1N4371 |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.7V |
Transitron Electronic |
| 2009 |
1N4371A |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 2010 |
1N4371A |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.7V, tolerance ±5% |
Transitron Electronic |
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