No. |
Part Name |
Description |
Manufacturer |
1981 |
DRV8711DCP |
Stepper Motor Gate Driver with On-Chip 1/256 Micro-Stepping Indexer and Stall Detect 38-HTSSOP -40 to 85 |
Texas Instruments |
1982 |
DRV8711DCPR |
Stepper Motor Gate Driver with On-Chip 1/256 Micro-Stepping Indexer and Stall Detect 38-HTSSOP -40 to 85 |
Texas Instruments |
1983 |
DS022-1 |
Virte -E 1.8 V Field Programmable Gate Arrays |
Xilinx |
1984 |
E130D |
1 NAND gate with 8 inputs, possibly equivalent SN8430N |
RFT |
1985 |
E150D |
2 AND-NOR gates with 2 x 2 inputs each, 1 gate with expansion the entrance, possibly equivalent SN8450N |
RFT |
1986 |
E153D |
1 AND-NOR gate with 4 x 2 inputs each and expander input, possibly equivalent SN8453N |
RFT |
1987 |
EC103D1 |
Sensitive gate thyristor |
Philips |
1988 |
EC103D1 |
EC103D1; Sensitive gate thyristor |
Philips |
1989 |
EL7242 |
Driver, Power MOSFET, 2A Peak, High Speed, Dual Low Side Driver, NAND Gate function |
Intersil |
1990 |
EMB1412 |
EMB1412 MOSFET Gate Driver 8-MSOP-PowerPAD -40 to 125 |
Texas Instruments |
1991 |
EMB1412MY/NOPB |
EMB1412 MOSFET Gate Driver 8-MSOP-PowerPAD -40 to 125 |
Texas Instruments |
1992 |
EMB1412MYE/NOPB |
EMB1412 MOSFET Gate Driver 8-MSOP-PowerPAD -40 to 125 |
Texas Instruments |
1993 |
EMB1428Q |
Switch Matrix Gate Driver for Active Cell Balancing 48-WQFN |
Texas Instruments |
1994 |
EMB1428QSQ/NOPB |
Switch Matrix Gate Driver for Active Cell Balancing 48-WQFN -40 to 125 |
Texas Instruments |
1995 |
EMB1428QSQE/NOPB |
Switch Matrix Gate Driver for Active Cell Balancing 48-WQFN -40 to 125 |
Texas Instruments |
1996 |
EMB1428QSQX/NOPB |
Switch Matrix Gate Driver for Active Cell Balancing 48-WQFN |
Texas Instruments |
1997 |
EN13 |
EN13 is a 2-input EXCLUSIVE-NOR (XNOR) gate with 3x drive strength. |
etc |
1998 |
EN4423 |
N-Channnel Dual Gate MOSFET, 15V, 30mA, PG=21dB, NF=1.1dB, CP4 |
ON Semiconductor |
1999 |
EN4901 |
N-Channnel Dual Gate MOSFET, 15V, 30mA, PG=23dB, NF=1.1dB, CP4 |
ON Semiconductor |
2000 |
EO12 |
EO12 is a 2-input EXCLUSIVE-OR (XOR) gate with 2x drive strength |
Austria Mikro Systems |
2001 |
EVAL6393FB |
Low voltage full bridge reference design board featuring L6393 advanced high-voltage gate driver |
ST Microelectronics |
2002 |
EVALSTGAP1S |
Demonstration board for gapDRIVE: galvanically isolated single high voltage gate driver |
ST Microelectronics |
2003 |
EVDD404 |
IXDD404 Gate Driver IC Evaluation Board |
Directed Energy |
2004 |
EVDD408 |
IXDD408 And IXDD414 Gate Driver IC Evaluation Boards |
Directed Energy |
2005 |
EVDD414 |
IXDD408 And IXDD414 Gate Driver IC Evaluation Boards |
Directed Energy |
2006 |
EVDD415 |
IXDD415 High Frequency Gate Driver IC Evaluation Board |
Directed Energy |
2007 |
EVDD415 |
High frequency gate driver IC evaluation board |
IXYS |
2008 |
EVIC420 |
DEIC420 High Frequency Gate Driver IC Evaluation Board |
Directed Energy |
2009 |
F1001 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
2010 |
F1001C |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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