No. |
Part Name |
Description |
Manufacturer |
1981 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
1982 |
2N4891 |
P-N Planar silicon unijunction transistor |
Texas Instruments |
1983 |
2N4892 |
P-N Planar silicon unijunction transistor |
Texas Instruments |
1984 |
2N4893 |
P-N Planar silicon unijunction transistor |
Texas Instruments |
1985 |
2N4894 |
P-N Planar silicon unijunction transistor |
Texas Instruments |
1986 |
2N4895 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
1987 |
2N4896 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
1988 |
2N4897 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
1989 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
1990 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
1991 |
2N4957 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
1992 |
2N4958 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
1993 |
2N4959 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
1994 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
1995 |
2N5038 |
Silicon planar multiepitaxial NPN transistor |
SGS-ATES |
1996 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
1997 |
2N5039 |
Silicon planar multiepitaxial NPN transistor |
SGS-ATES |
1998 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
1999 |
2N5179 |
NPN SILICON PLANAR TRANSISTOR |
Boca Semiconductor Corporation |
2000 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
2001 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
2002 |
2N5180 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
2003 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
2004 |
2N5302 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
2005 |
2N5336 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
2006 |
2N5337 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
2007 |
2N5338 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
2008 |
2N5339 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
2009 |
2N5367(R) |
PNP SILICON PLANAR TRANSISTOR |
Micro Electronics |
2010 |
2N5400 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
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