No. |
Part Name |
Description |
Manufacturer |
1981 |
NMC27C256BQ25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
1982 |
NMC27C256BQ250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
1983 |
NMC27C256BQE150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
1984 |
NMC27C256BQE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
1985 |
NMC27C256BQM150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
1986 |
NMC27C256BQM200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
1987 |
NMC27C256Q17 |
170 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
1988 |
NMC27C256Q20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
1989 |
NMC27C256Q200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
1990 |
NMC27C256Q25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
1991 |
NMC27C256Q250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
1992 |
NMC27C256Q300 |
300 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
1993 |
NMC27C256QE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
1994 |
NMC27C256QE250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
1995 |
NMC27C256QM250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
1996 |
NMC27C256QM350 |
350 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
1997 |
NMC27C32BQ150 |
Memory configuration 4Kx8 Memory type EPROM Tolerance Vcc + 10 % Tolerance Vcc - 10 % |
Fairchild Semiconductor |
1998 |
NMC27C32BQ150 |
Memory configuration 4Kx8 Memory type EPROM Tolerance Vcc + 10 % Tolerance Vcc - 10 % |
Fairchild Semiconductor |
1999 |
NMC27C32BQ200 |
Memory configuration 4Kx8 Memory type EPROM Tolerance Vcc + 10 % Tolerance Vcc - 10 % |
Fairchild Semiconductor |
2000 |
NMC27C32BQ200 |
Memory configuration 4Kx8 Memory type EPROM Tolerance Vcc + 10 % Tolerance Vcc - 10 % |
Fairchild Semiconductor |
2001 |
NMC27C32BQE250 |
250 ns, Vcc=5V+/-10%, 32,768-bit (4k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
2002 |
NMC27C512AN15 |
150 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
2003 |
NMC27C512AN150 |
150 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
2004 |
NMC27C512AN17 |
170 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
2005 |
NMC27C512AN170 |
170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
2006 |
NMC27C512AN20 |
200 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
2007 |
NMC27C512AN200 |
200 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
2008 |
NMC27C512AN25 |
250 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
2009 |
NMC27C512AN250 |
250 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
2010 |
NMC27C512ANE15 |
150 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
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