No. |
Part Name |
Description |
Manufacturer |
1981 |
T2301B |
2.5A 200A Sensitive-Gate Silicon Triacs |
RCA Solid State |
1982 |
T2301D |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 400 V. |
General Electric Solid State |
1983 |
T2301D |
2.5A 400A Sensitive-Gate Silicon Triacs |
RCA Solid State |
1984 |
T2301F |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 50 V. |
General Electric Solid State |
1985 |
T2301M |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 600 V. |
General Electric Solid State |
1986 |
T2301N |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 800 V. |
General Electric Solid State |
1987 |
T2302A |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 100 V. |
General Electric Solid State |
1988 |
T2302A |
2.5A 100V Sensitive-Gate Silicon Triacs |
RCA Solid State |
1989 |
T2302B |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V. |
General Electric Solid State |
1990 |
T2302B |
2.5A 200V Sensitive-Gate Silicon Triacs |
RCA Solid State |
1991 |
T2302D |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 400 V. |
General Electric Solid State |
1992 |
T2302D |
2.5A 400V Sensitive-Gate Silicon Triacs |
RCA Solid State |
1993 |
T2302F |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 50 V. |
General Electric Solid State |
1994 |
T2302M |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 600 V. |
General Electric Solid State |
1995 |
T2302N |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 800 V. |
General Electric Solid State |
1996 |
T2304B |
400Hz 0.5A 200V Sensitive-Gate Silicon Triacs |
RCA Solid State |
1997 |
T2304D |
400Hz 0.5A 400V Sensitive-Gate Silicon Triacs |
RCA Solid State |
1998 |
T2305B |
400Hz 0.5A 200V Sensitive-Gate Silicon Triacs |
RCA Solid State |
1999 |
T2305D |
400Hz 0.5A 400V Sensitive-Gate Silicon Triacs |
RCA Solid State |
2000 |
T2310A |
2.5A 100V Sensitive-Gate Silicon Triacs |
RCA Solid State |
2001 |
T2310B |
2.5A 200V Sensitive-Gate Silicon Triacs |
RCA Solid State |
2002 |
T2310D |
2.5A 400V Sensitive-Gate Silicon Triacs |
RCA Solid State |
2003 |
T2311A |
2.5A 100A Sensitive-Gate Silicon Triacs |
RCA Solid State |
2004 |
T2311B |
2.5A 200A Sensitive-Gate Silicon Triacs |
RCA Solid State |
2005 |
T2311D |
2.5A 400A Sensitive-Gate Silicon Triacs |
RCA Solid State |
2006 |
T2312A |
2.5A 100V Sensitive-Gate Silicon Triacs |
RCA Solid State |
2007 |
T2312B |
2.5A 200V Sensitive-Gate Silicon Triacs |
RCA Solid State |
2008 |
T2312D |
2.5A 400V Sensitive-Gate Silicon Triacs |
RCA Solid State |
2009 |
T2322B |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V. |
General Electric Solid State |
2010 |
TA7367 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
| | | |