No. |
Part Name |
Description |
Manufacturer |
1981 |
MBRF10100-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=10A |
Comchip Technology |
1982 |
MBRF10100CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=10A |
Comchip Technology |
1983 |
MBRF10100CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=10A |
Comchip Technology |
1984 |
MBRS1100TR |
100V 1A Schottky Discrete Diode in a SMB package |
International Rectifier |
1985 |
MDE-10D101K |
100V; max peak current:3500A; metal oxide varistor. Standard D series 10mm disc |
MDE Semiconductor |
1986 |
MDE-14D101K |
100V; max peak current:6000A; metal oxide varistor. Standard D series 14mm disc |
MDE Semiconductor |
1987 |
MDE-20D101K |
100V; max peak current:10000A; metal oxide varistor. Standard D series 20mm disc |
MDE Semiconductor |
1988 |
MDE-5D101K |
100V; max peak current:800A; metal oxide varistor. Standard D series 5mm disc |
MDE Semiconductor |
1989 |
MDE-7D101M |
100V; max peak current:1750A; metal oxide varistor. Standard D series 7mm disc |
MDE Semiconductor |
1990 |
MJ4032 |
100V darlington medium power complementary silicon transistor |
Comset Semiconductors |
1991 |
MJ4035 |
100V darlington medium power complementary silicon transistor |
Comset Semiconductors |
1992 |
MMBD4148 |
100V ultra fast recovery rectifier |
MCC |
1993 |
MMBD4448HADW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
1994 |
MMBD4448HAQW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
1995 |
MMBD4448HCDW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
1996 |
MMBD4448HCQW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
1997 |
MMBD4448HSDW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
1998 |
MMBD4448HTW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
1999 |
MMBD7000 |
100V ultra fast recovery rectifier |
MCC |
2000 |
MMBD914 |
100V ultra fast recovery rectifier |
MCC |
2001 |
MP1001G-G |
Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=10A |
Comchip Technology |
2002 |
MP1001G-G |
Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=10A |
Comchip Technology |
2003 |
MRD500 |
100V Photo Diode PIN Silicon 100mW |
Motorola |
2004 |
MRD510 |
100V Photo Diode PIN Silicon 100mW |
Motorola |
2005 |
NSS1C301E |
100V, 3A, Low VCE(sat) NPN Transistor |
ON Semiconductor |
2006 |
NVD6824NL |
100V, 41A, 20 mOhm, Single N-Channel DPAK Logic Level Power MOSFET |
ON Semiconductor |
2007 |
OM100Q10CB |
100V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package |
International Rectifier |
2008 |
OM5002ST |
100V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package |
International Rectifier |
2009 |
OM5202SR |
100V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a D2 package |
International Rectifier |
2010 |
OM5202ST |
100V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package |
International Rectifier |
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