| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
ISPLSI5512VE-125LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1982 |
ISPLSI5512VE-125LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1983 |
ISPLSI5512VE-125LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1984 |
ISPLSI5512VE-125LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1985 |
ISPLSI5512VE-125LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1986 |
ISPLSI5512VE-125LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1987 |
ISPLSI5512VE-125LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1988 |
ISPLSI5512VE-155LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 1989 |
ISPLSI5512VE-155LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 1990 |
ISPLSI5512VE-155LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 1991 |
ISPLSI5512VE-155LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 1992 |
ISPLSI5512VE-80LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 1993 |
ISPLSI5512VE-80LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 1994 |
ISPLSI5512VE-80LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 1995 |
ISPLSI5512VE-80LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 1996 |
ISPLSI81080V |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 1997 |
ISPLSI81080V-125LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 1998 |
ISPLSI81080V-125LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 1999 |
ISPLSI81080V-60LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 2000 |
ISPLSI81080V-60LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 2001 |
ISPLSI81080V-90LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 2002 |
ISPLSI81080V-90LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 2003 |
ISPLSI8600V |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 2004 |
ISPLSI8600V-125LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 2005 |
ISPLSI8600V-125LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 2006 |
ISPLSI8600V-60LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 2007 |
ISPLSI8600V-60LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 2008 |
ISPLSI8600V-90LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 2009 |
ISPLSI8600V-90LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 2010 |
ISPLSI883 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
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