| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
2SB1001 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1982 |
2SB1002 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1983 |
2SB1011 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 1984 |
2SB1015 |
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1985 |
2SB1015A |
Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Applications |
TOSHIBA |
| 1986 |
2SB1016 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 1987 |
2SB1016A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1988 |
2SB1018A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 1989 |
2SB1025 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1990 |
2SB1026 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1991 |
2SB1028 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1992 |
2SB1030 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1993 |
2SB1030A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1994 |
2SB1031 |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 1995 |
2SB1031K |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K |
Hitachi Semiconductor |
| 1996 |
2SB1033 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1997 |
2SB1036 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1998 |
2SB1046 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1464 |
Hitachi Semiconductor |
| 1999 |
2SB1050 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2000 |
2SB1054 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2001 |
2SB1056 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
| 2002 |
2SB1057 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
| 2003 |
2SB1058 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1489 |
Hitachi Semiconductor |
| 2004 |
2SB1059 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2005 |
2SB1061 |
Silicon PNP Triple Diffused Low Frequency Power Amplifier |
Hitachi Semiconductor |
| 2006 |
2SB1063 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2007 |
2SB1067 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 2008 |
2SB1071 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2009 |
2SB1071A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2010 |
2SB1073 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
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