| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
1N5953A |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1982 |
1N5953C |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 1983 |
1N5953D |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 1984 |
1N5954 |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1985 |
1N5954A |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1986 |
1N5954C |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 1987 |
1N5954D |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 1988 |
1N5955 |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1989 |
1N5955A |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1990 |
1N5955C |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 1991 |
1N5955D |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 1992 |
1N5956 |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1993 |
1N5956A |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1994 |
1N5956C |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 1995 |
1N5956D |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 1996 |
1N6082 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1997 |
1N6083 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1998 |
1N6084 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1999 |
1N6085 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2000 |
1N6086 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2001 |
1N6087 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2002 |
1N6088 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2003 |
1N6089 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2004 |
1N6090 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2005 |
1N6091 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2006 |
1N6099 |
HIGH CONDUCTANCE LOW LEAKAGE DIODES |
BKC International Electronics |
| 2007 |
1N6099 |
High conductance low leakage diode. Working inverse voltage 125 V. |
Fairchild Semiconductor |
| 2008 |
1N746 |
500 mW silicon linear diode. Max zener impedance 28.0 Ohm, max zener voltage 3.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 2009 |
1N746 |
Silicon Zener Diode 400mW 3.3V, ±10% tolerance |
Texas Instruments |
| 2010 |
1N746A |
500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
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