No. |
Part Name |
Description |
Manufacturer |
1981 |
IF4511 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1982 |
IF9030 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1983 |
IFN105 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1984 |
IFN112 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1985 |
IFN113 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1986 |
IFN146 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1987 |
IFN147 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1988 |
IFN152 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1989 |
IFN363 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1990 |
IFN421 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1991 |
IFN422 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1992 |
IFN423 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1993 |
IFN424 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1994 |
IFN425 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1995 |
IFN426 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1996 |
IFN5114 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
1997 |
IFN5115 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
1998 |
IFN5116 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
1999 |
IFN5432 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
2000 |
IFN5433 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
2001 |
IFN5434 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
2002 |
IFN5564 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
2003 |
IFN5565 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
2004 |
IFN5566 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
2005 |
IFN5911 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
2006 |
IFN5912 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
2007 |
IFN6449 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
2008 |
IFN6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
2009 |
IFN860 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
2010 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
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