| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
BAW101S |
High voltage double diode |
NXP Semiconductors |
| 1982 |
BAW101S |
High voltage double diode |
Philips |
| 1983 |
BAW101S |
BAW101S; High voltage double diode |
Philips |
| 1984 |
BAW13 |
Silicon signal diode - high voltage switching |
SESCOSEM |
| 1985 |
BAX16 |
Silicon signal diode - high voltage switching |
SESCOSEM |
| 1986 |
BAX17 |
Silicon signal diode - high voltage switching |
SESCOSEM |
| 1987 |
BAY45 |
Silicon signal diode - high voltage switching |
SESCOSEM |
| 1988 |
BAY80 |
Silicon signal diode - high voltage switching |
SESCOSEM |
| 1989 |
BC300 |
Transistor for high voltage amplifiers |
SGS-ATES |
| 1990 |
BC372 |
High Voltage Darlington Transistors |
Motorola |
| 1991 |
BC372-D |
High Voltage Darlington Transistors NPN Silicon |
ON Semiconductor |
| 1992 |
BC373 |
High Voltage Darlington Transistors |
Motorola |
| 1993 |
BC393 |
HIGH VOLTAGE AMPLIFIER |
SGS Thomson Microelectronics |
| 1994 |
BC393 |
Transistor for high voltage amplifiers |
SGS-ATES |
| 1995 |
BC393 |
HIGH VOLTAGE AMPLIFIER |
ST Microelectronics |
| 1996 |
BC394 |
HIGH VOLTAGE AMPLIFIER |
SGS Thomson Microelectronics |
| 1997 |
BC394 |
Transistor for high voltage amplifiers |
SGS-ATES |
| 1998 |
BC447 |
High Voltage Transistors |
ON Semiconductor |
| 1999 |
BC447-D |
High Voltage Transistors PNP Silicon |
ON Semiconductor |
| 2000 |
BC449 |
High Voltage Transistors |
ON Semiconductor |
| 2001 |
BC449A |
High Voltage Transistors |
ON Semiconductor |
| 2002 |
BC450 |
High Voltage Transistors |
Motorola |
| 2003 |
BC450A |
High Voltage Transistors |
Motorola |
| 2004 |
BC556 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -80V, Vceo= -65V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 2005 |
BC557 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 2006 |
BC558 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 2007 |
BC559 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 2008 |
BC560 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 2009 |
BCX41 |
High Voltage Transistors - SOT23 NPN AF Switching Transistor |
Infineon |
| 2010 |
BCX42 |
High Voltage Transistors - SOT23 PNP AF Switching Transistor |
Infineon |
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