| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
P2160A-08TT |
3.3 V, 40 MHz to 166 MHz, high frequency LCD panel EMI reduction IC |
Alliance Semiconductor |
| 1982 |
PMAD1108 |
50V; 500Watts; steering diode array. For ethernet - 10/100 base T, high frequency data lines, RS-232 & RS-422 interface networks, computer I/O ports |
Protek Devices |
| 1983 |
PMMAD1108 |
50V; 500Watts; steering diode array. For ethernet - 10/100 base T, high frequency data lines, RS-232 & RS-422 interface networks, computer I/O ports |
Protek Devices |
| 1984 |
PN2368 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 1985 |
PN2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 1986 |
PN4416 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 1987 |
PN918 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 1988 |
PT4572A |
NPN Silicon High Frequency Transistor |
Motorola |
| 1989 |
PT4579 |
NPN Silicon High Frequency Transistor |
Motorola |
| 1990 |
PTF |
Industrial, Very Low Noise and Voltage Coefficient, Small Package, 100% Laser Spiraled, Very Good High Frequency Characteristics, Acceptance Testing Available, Can Replace Wirewound Bobbins, Superior Moisture Protection |
Vishay |
| 1991 |
RB876W |
Diodes > High Frequency Diodes |
ROHM |
| 1992 |
RB886G |
Diodes > High Frequency Diodes |
ROHM |
| 1993 |
RCME |
High Frequency Performance Molded Metal film Resistors |
Vishay |
| 1994 |
RF2444 |
HIGH FREQUENCY LNA/MIXER |
RF Micro Devices |
| 1995 |
RF2444PCBA-H |
High frequency LNA/mixer |
RF Micro Devices |
| 1996 |
RF2494 |
HIGH FREQUENCY LNA/MIXER |
RF Micro Devices |
| 1997 |
RF2494PCBA-H |
High frequency LNA/ mixer |
RF Micro Devices |
| 1998 |
RM20C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1999 |
RM20CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2000 |
RM20CA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2001 |
RM20DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2002 |
RM20DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2003 |
RM300CA-9W |
FAST RECOVERY DIODE MODULES HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2004 |
RM50C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2005 |
RM50CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2006 |
RM50CA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2007 |
RM50DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2008 |
RM50DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2009 |
RN142S |
Diodes > High Frequency Diodes > PIN diodes |
ROHM |
| 2010 |
RN731V |
Diodes > High Frequency Diodes > PIN diodes |
ROHM |
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