| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1982 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1983 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1984 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1985 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1986 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1987 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1988 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1989 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1990 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1991 |
X2N4416 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 1992 |
X2N5484 |
25 V, N-Channel JFET high frequency amplifier |
Calogic |
| 1993 |
X2N5485 |
25 V, N-Channel JFET high frequency amplifier |
Calogic |
| 1994 |
X2N5486 |
25 V, N-Channel JFET high frequency amplifier |
Calogic |
| 1995 |
X2N5912 |
Dual N-Channel JFET High Frequency Amplifier |
Calogic |
| 1996 |
XP06531 |
For high frequency amplification, oscillation, and mixing |
Panasonic |
| 1997 |
XU308 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 1998 |
XU308-10 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 1999 |
XU309 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 2000 |
XU310 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 2001 |
ZTX196 |
High frequency NPN transistor |
FERRANTI |
| 2002 |
ZTX197 |
High frequency NPN transistor |
FERRANTI |
| 2003 |
ZTX320 |
High frequency NPN transistor |
FERRANTI |
| 2004 |
ZTX321 |
High frequency NPN transistor |
FERRANTI |
| 2005 |
ZTX325 |
High frequency NPN transistor |
FERRANTI |
| 2006 |
ZTX326 |
High frequency NPN transistor |
FERRANTI |
| 2007 |
ZTX327 |
High frequency NPN transistor |
FERRANTI |
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