| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
1N3070 |
Glass passivated silicon diode |
Texas Instruments |
| 1982 |
1N3070 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 1983 |
1N3071 |
Silicon signal diode - high voltage switching |
SESCOSEM |
| 1984 |
1N3123 |
Silicon Planar Diode |
ITT Semiconductors |
| 1985 |
1N3123 |
Silicon Signal Diode |
Motorola |
| 1986 |
1N3124 |
Silicon Planar Diode |
ITT Semiconductors |
| 1987 |
1N3124 |
Silicon Signal Diode |
Motorola |
| 1988 |
1N3147 |
Silicon Signal Diode |
Motorola |
| 1989 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
| 1990 |
1N3154 |
Silicon Voltage Reference Diode 8.4V, Mil Type USN/JAN |
Transitron Electronic |
| 1991 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
| 1992 |
1N3154A |
Silicon Voltage Reference Diode 8.4V |
Transitron Electronic |
| 1993 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
| 1994 |
1N3155 |
Silicon Voltage Reference Diode 8.4V, Mil Type USN/JAN |
Transitron Electronic |
| 1995 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
| 1996 |
1N3155A |
Silicon Voltage Reference Diode 8.4V |
Transitron Electronic |
| 1997 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
| 1998 |
1N3156 |
Silicon Voltage Reference Diode 8.4V, Mil Type USN/JAN |
Transitron Electronic |
| 1999 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
| 2000 |
1N3156A |
Silicon Voltage Reference Diode 8.4V |
Transitron Electronic |
| 2001 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
| 2002 |
1N3157 |
Silicon Voltage Reference Diode 8.4V, Mil Type USN/JAN |
Transitron Electronic |
| 2003 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
| 2004 |
1N3157A |
Silicon Voltage Reference Diode 8.4V |
Transitron Electronic |
| 2005 |
1N316 |
Silicon Rectifier Diode, replacement 1N4001 |
Motorola |
| 2006 |
1N317 |
Silicon Rectifier Diode, replacement 1N4002 |
Motorola |
| 2007 |
1N318 |
Silicon Rectifier Diode, replacement 1N4003 |
Motorola |
| 2008 |
1N319 |
Silicon Rectifier Diode, replacement 1N4004 |
Motorola |
| 2009 |
1N3192 |
Silicon Signal Diode |
Motorola |
| 2010 |
1N3193 |
Diffused-Junction Silicon Rectifier |
RCA Solid State |
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