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Datasheets for ISTOR S

Datasheets found :: 3909
Page: | 63 | 64 | 65 | 66 | 67 | 68 | 69 | 70 | 71 |
No. Part Name Description Manufacturer
1981 GT30J311 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA
1982 GT30J322 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS TOSHIBA
1983 GT30J324 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA
1984 GT40G121 Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA
1985 GT40M101 INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA
1986 GT40Q321 Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application TOSHIBA
1987 GT40T101 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS TOSHIBA
1988 GT40T301 Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications TOSHIBA
1989 GT50G321 Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA
1990 GT50J102 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA
1991 GT50J121 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA
1992 GT50J301 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA
1993 GT50J322 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS TOSHIBA
1994 GT50J325 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA
1995 GT5G102 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS TOSHIBA
1996 GT5G103 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS TOSHIBA
1997 GT5G131 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS TOSHIBA
1998 GT5J301 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA
1999 GT5J311 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA
2000 GT5J311(SM) INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA
2001 GT60J321 Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications TOSHIBA
2002 GT60J322 Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications TOSHIBA
2003 GT60M104 Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA
2004 GT60M301 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS TOSHIBA
2005 GT60M302 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA
2006 GT60M303 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA
2007 GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA
2008 GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA
2009 GT60N321 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation TOSHIBA
2010 GT80J101 INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS TOSHIBA


Datasheets found :: 3909
Page: | 63 | 64 | 65 | 66 | 67 | 68 | 69 | 70 | 71 |



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