| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
1N5379B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1982 |
1N5380B |
120 V, 10 mA, 5 W glass passivated zener diode |
Fagor |
| 1983 |
1N5380B |
500 mW DO-35 Glass Zener Voltage Regulator Diodes |
Motorola |
| 1984 |
1N5380B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 120V, Izt =10mA |
Panjit International Inc |
| 1985 |
1N5380B |
120 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1986 |
1N5380B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1987 |
1N5381B |
130 V, 10 mA, 5 W glass passivated zener diode |
Fagor |
| 1988 |
1N5381B |
500 mW DO-35 Glass Zener Voltage Regulator Diodes |
Motorola |
| 1989 |
1N5381B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1990 |
1N5381B |
130 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1991 |
1N5381B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1992 |
1N5382B |
140 V, 8 mA, 5 W glass passivated zener diode |
Fagor |
| 1993 |
1N5382B |
500 mW DO-35 Glass Zener Voltage Regulator Diodes |
Motorola |
| 1994 |
1N5382B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1995 |
1N5382B |
140 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1996 |
1N5382B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1997 |
1N5383B |
150 V, 8 mA, 5 W glass passivated zener diode |
Fagor |
| 1998 |
1N5383B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1999 |
1N5383B |
150 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2000 |
1N5383B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2001 |
1N5384B |
160 V, 8 mA, 5 W glass passivated zener diode |
Fagor |
| 2002 |
1N5384B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 2003 |
1N5384B |
160 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2004 |
1N5384B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2005 |
1N5385B |
170 V, 8 mA, 5 W glass passivated zener diode |
Fagor |
| 2006 |
1N5385B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 2007 |
1N5385B |
170 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2008 |
1N5385B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2009 |
1N5386 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 2010 |
1N5386 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
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