| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
EL9111 |
Triple Differential Receiver/Equalizer |
Intersil |
| 1982 |
EL9112 |
Triple Differential Receiver/Equalizer |
Intersil |
| 1983 |
ENA2189 |
Optical Image Stabilization (OIS) Controller & Driver |
ON Semiconductor |
| 1984 |
EQ50F100 |
6.25Gbps Backplane Equalizer [Preliminary] |
National Semiconductor |
| 1985 |
EQ50F100LR |
6.25Gbps Backplane Equalizer [Preliminary] |
National Semiconductor |
| 1986 |
EQCO30R5 |
Equalizers |
Microchip |
| 1987 |
EQCO30R5.D |
Equalizers |
Microchip |
| 1988 |
EQCO30R5.D-TRAY |
Equalizers |
Microchip |
| 1989 |
EQCO31R20 |
Equalizers |
Microchip |
| 1990 |
EQCO31R20.3 |
Equalizers |
Microchip |
| 1991 |
EQCO31R20.3-TRAY |
Equalizers |
Microchip |
| 1992 |
EQCO62R20 |
Equalizers |
Microchip |
| 1993 |
EQCO62R20.3 |
Equalizers |
Microchip |
| 1994 |
EQCO62R20.3-TRAY |
Equalizers |
Microchip |
| 1995 |
ERC |
Military/Established Reliability, MIL-R-55182 Qualified, Type RNC, Very Low Noise, Verified Failure Rate, 100% Stabilization and Screening Tests, Controlled Temperature Coefficient |
Vishay |
| 1996 |
ESS/W/N |
Military/Established Reliability, MIL-R-39007 Qual., Type RWR, R Level, Meets Solvent Resistance of MIL-STD-202 (Method 215), 100% Power Stabilization and Screening Test |
Vishay |
| 1997 |
F1001 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1998 |
F1001C |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1999 |
F1002 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2000 |
F1003 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2001 |
F1004 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2002 |
F1005 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2003 |
F1006 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2004 |
F1007 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2005 |
F1008 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2006 |
F1012 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2007 |
F1014 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2008 |
F1015 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2009 |
F1016 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2010 |
F1018 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| | | |
