| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
1N5522B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1982 |
1N5522B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1983 |
1N5522B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1984 |
1N5522BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1985 |
1N5522BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1986 |
1N5522C |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1987 |
1N5522C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1988 |
1N5522C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1989 |
1N5522CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1990 |
1N5522CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1991 |
1N5522D |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1992 |
1N5522D-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1993 |
1N5522D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1994 |
1N5522DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1995 |
1N5522DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1996 |
1N5523 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1997 |
1N5523 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1998 |
1N5523 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1999 |
1N5523 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2000 |
1N5523 |
Low Voltage Avalanche Zener |
Microsemi |
| 2001 |
1N5523A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2002 |
1N5523A |
Low Voltage Avalanche Zener |
Microsemi |
| 2003 |
1N5523A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 2004 |
1N5523A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 2005 |
1N5523AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 2006 |
1N5523AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 2007 |
1N5523B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2008 |
1N5523B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 2009 |
1N5523B |
Low Voltage Avalanche Zener |
Microsemi |
| 2010 |
1N5523B |
Low Voltage Avalanche Zener |
Microsemi |
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