No. |
Part Name |
Description |
Manufacturer |
1981 |
2SB1031K |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K |
Hitachi Semiconductor |
1982 |
2SB1033 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
1983 |
2SB1036 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1984 |
2SB1046 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1464 |
Hitachi Semiconductor |
1985 |
2SB1050 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1986 |
2SB1054 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
1987 |
2SB1056 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
1988 |
2SB1057 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
1989 |
2SB1058 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1489 |
Hitachi Semiconductor |
1990 |
2SB1059 |
Transistors>Amplifiers/Bipolar |
Renesas |
1991 |
2SB1061 |
Silicon PNP Triple Diffused Low Frequency Power Amplifier |
Hitachi Semiconductor |
1992 |
2SB1063 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
1993 |
2SB1067 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
1994 |
2SB1071 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
1995 |
2SB1071A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
1996 |
2SB1073 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1997 |
2SB1077 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 |
Hitachi Semiconductor |
1998 |
2SB1101 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
1999 |
2SB1102 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
2000 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
2001 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
2002 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
2003 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
2004 |
2SB1118 |
Low-Voltage High-Current Amplifier, Muting Applications |
SANYO |
2005 |
2SB1119 |
LF Amplifier, Electronic Governor Applications |
SANYO |
2006 |
2SB1122 |
PNP Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Applications |
SANYO |
2007 |
2SB1133 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
2008 |
2SB1148 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2009 |
2SB1148A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2010 |
2SB1154 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
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