| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
SPW16N50C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 1982 |
SPW21N50C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 1983 |
SPW32N50C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 1984 |
SPW52N50C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 1985 |
SSH22N50A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
| 1986 |
SSI1N50B |
520V N-Channel MOSFET |
Fairchild Semiconductor |
| 1987 |
SSI1N50BTU |
500V N-Channel B-FET / Substitute of SSI1N50A |
Fairchild Semiconductor |
| 1988 |
SSI1N50BTU |
500V N-Channel B-FET / Substitute of SSI1N50A |
Fairchild Semiconductor |
| 1989 |
SSP1N50B |
520V N-Channel MOSFET |
Fairchild Semiconductor |
| 1990 |
SSR1N50B |
520V N-Channel MOSFET |
Fairchild Semiconductor |
| 1991 |
SSS1N50B |
520V N-Channel MOSFET |
Fairchild Semiconductor |
| 1992 |
SSU1N50B |
520V N-Channel MOSFET |
Fairchild Semiconductor |
| 1993 |
SSU1N50BTU |
500V N-Channel B-FET / Substitute of SSU1N50A |
Fairchild Semiconductor |
| 1994 |
SSU1N50BTU |
500V N-Channel B-FET / Substitute of SSU1N50A |
Fairchild Semiconductor |
| 1995 |
SSW1N50B |
520V N-Channel MOSFET |
Fairchild Semiconductor |
| 1996 |
SSW1N50BTM |
500V N-Channel B-FET / Substitute of SSW1N50A |
Fairchild Semiconductor |
| 1997 |
SSW1N50BTM |
500V N-Channel B-FET / Substitute of SSW1N50A |
Fairchild Semiconductor |
| 1998 |
STD16N50M2 |
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package |
ST Microelectronics |
| 1999 |
STD2N50 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 2000 |
STD2N50 |
N-CHANNEL MOSFET |
ST Microelectronics |
| 2001 |
STD2N50-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 2002 |
STD2N50-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 2003 |
STE26N50 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
ST Microelectronics |
| 2004 |
STE36N50 |
N Channel Enhancement Mode Power MOS Transistor in Isotop Package |
ST Microelectronics |
| 2005 |
STF16N50M2 |
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package |
ST Microelectronics |
| 2006 |
STF16N50U |
N-channel 500 V, 0.47 Ohm, 15 A UltraFAST MESH(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 2007 |
STP16N50M2 |
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220 package |
ST Microelectronics |
| 2008 |
STP6N50 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
| 2009 |
STP6N50FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
| 2010 |
T0,8N500 |
0.8A 500V Thyristor |
IPRS Baneasa |
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