No. |
Part Name |
Description |
Manufacturer |
1981 |
IRD3913 |
Diode Switching 400V 30A 2-Pin DO-5 |
New Jersey Semiconductor |
1982 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1983 |
IRF530 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
1984 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
TRSYS |
1985 |
IRF530-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
1986 |
IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1987 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1988 |
IRF533 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1989 |
IRF540-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
1990 |
IRF640-D |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
1991 |
IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
1992 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
1993 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
1994 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
1995 |
IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1996 |
IRF841 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1997 |
IRF842 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1998 |
IRF843 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1999 |
IRFF110 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
2000 |
IRFF113 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
2001 |
ISL59311 |
Differential Video Amplifier with Common Mode Sync Encoder and Serial Digital Interface |
Intersil |
2002 |
JDH2S01T |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer |
TOSHIBA |
2003 |
JDP2S01AFS |
DIODE Silicon Epitaxial PIN Type UHF~VHF Band RF Switch Applications |
TOSHIBA |
2004 |
JDP2S01E |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2005 |
JDP2S01S |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2006 |
JDP2S01T |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2007 |
JDP2S01U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2008 |
JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2009 |
JDP2S02S |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2010 |
JDP2S02T |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
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