| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
BU52012HFV-TR |
Unipolar Detection Hall ICs |
ROHM |
| 1982 |
BU52013HFV |
Unipolar Detection Hall ICs |
ROHM |
| 1983 |
BU52013HFV-TR |
Unipolar Detection Hall ICs |
ROHM |
| 1984 |
BU52014HFV |
Omnipolar Detection Hall ICs with Polarity Discrimination |
ROHM |
| 1985 |
BU52014HFV-TR |
Omnipolar Detection Hall ICs with Polarity Discrimination |
ROHM |
| 1986 |
BU52054GWZ |
Omnipolar Detection Hall ICs |
ROHM |
| 1987 |
BU52054GWZ-E2 |
Omnipolar Detection Hall ICs |
ROHM |
| 1988 |
BU52055GWZ |
Omnipolar Detection Hall ICs |
ROHM |
| 1989 |
BU52055GWZ-E2 |
Omnipolar Detection Hall ICs |
ROHM |
| 1990 |
BU52061NVX |
Omnipolar Detection Hall ICs |
ROHM |
| 1991 |
BU52061NVX-TR |
Omnipolar Detection Hall ICs |
ROHM |
| 1992 |
BU52075GWZ |
Omnipolar Detection Hall IC |
ROHM |
| 1993 |
BU52075GWZ-E2 |
Omnipolar Detection Hall IC |
ROHM |
| 1994 |
BU52077GWZ |
Omnipolar Detection Hall IC |
ROHM |
| 1995 |
BU52077GWZ-E2 |
Omnipolar Detection Hall IC |
ROHM |
| 1996 |
BU52078GWZ |
Omnipolar Detection Hall IC |
ROHM |
| 1997 |
BU52078GWZ-E2 |
Omnipolar Detection Hall IC |
ROHM |
| 1998 |
BU606 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 1999 |
BU606D |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 2000 |
BU607 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 2001 |
BU607D |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 2002 |
BU608 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 2003 |
BU608D |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 2004 |
BU806R |
Silicon high power general purpose darlington NPN transistor - metal case |
IPRS Baneasa |
| 2005 |
BU807R |
Silicon high power general purpose darlington NPN transistor - metal case |
IPRS Baneasa |
| 2006 |
BUH417 |
V(cbo): 1700V; V(ceo): 700V; V(ebo): 10V; 7A; 55W; CRT horizontal deflection high voltage NPN fast switching transistor |
SGS Thomson Microelectronics |
| 2007 |
BUH417 |
CRT Horizontal Deflection High Voltage NPN Fastswitching Transistor |
ST Microelectronics |
| 2008 |
BUH517 |
CRT HORIZONTAL DEFLECTION HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR |
SGS Thomson Microelectronics |
| 2009 |
BUH517 |
CRT HORIZONTAL DEFLECTION HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR |
ST Microelectronics |
| 2010 |
BUR606 |
Silicon high power general purpose darlington NPN transistor - metal case |
IPRS Baneasa |
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