No. |
Part Name |
Description |
Manufacturer |
1981 |
TM124BBJ32F |
Dynamic Random-Access Memory Module |
Texas Instruments |
1982 |
TM124BBJ32U |
Dynamic Random-Access Memory Module |
Texas Instruments |
1983 |
TM124GU8A |
1 048 576-Word By 8-Bit Random-Access Memory Module |
Texas Instruments |
1984 |
TM124GU8A-60 |
1 048 576-Word By 8-Bit Random-Access Memory Module |
Texas Instruments |
1985 |
TM124GU8A-70 |
1 048 576-Word By 8-Bit Random-Access Memory Module |
Texas Instruments |
1986 |
TM248CBJ32F |
Dynamic Random-Access Memory Module |
Texas Instruments |
1987 |
TM248CBJ32U |
Dynamic Random-Access Memory Module |
Texas Instruments |
1988 |
TM893NBM36A |
Dynamic Random-Access Memory Modules |
Texas Instruments |
1989 |
TM893NBM36Q |
Dynamic Random-Access Memory Modules |
Texas Instruments |
1990 |
TMM2018AP |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
1991 |
TMM2018AP-25 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
1992 |
TMM2018AP-35 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
1993 |
TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
1994 |
TMM2063AP-10 |
100ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
1995 |
TMM2063AP-12 |
120ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
1996 |
TMM2063AP-70 |
70ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
1997 |
TMS4116 |
16 / 384-Bin Dynamic Random-Access Memory |
Texas Instruments |
1998 |
TMS416160 |
1 048 576-Word By 16-Bit High-Speed Dynamic Random-Access Memories |
Texas Instruments |
1999 |
TMS416409A |
4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
National Semiconductor |
2000 |
TMS416409ADGA-50 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 50ns |
National Semiconductor |
2001 |
TMS416409ADGA-60 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 60ns |
National Semiconductor |
2002 |
TMS416409ADGA-70 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 70ns |
National Semiconductor |
2003 |
TMS416409ADJ-50 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 50ns |
National Semiconductor |
2004 |
TMS416409ADJ-60 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 60ns |
National Semiconductor |
2005 |
TMS416409ADJ-70 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 70ns |
National Semiconductor |
2006 |
TMS417409A |
4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
National Semiconductor |
2007 |
TMS417409ADGA-50 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 50ns |
National Semiconductor |
2008 |
TMS417409ADGA-60 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 60ns |
National Semiconductor |
2009 |
TMS417409ADGA-70 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 70ns |
National Semiconductor |
2010 |
TMS417409ADJ-50 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 50ns |
National Semiconductor |
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