No. |
Part Name |
Description |
Manufacturer |
19921 |
RCA-2N5919 |
16- and 25-Watt Broadband Power Amplifiers Using RCA-2N5918, 2N5919, and 2N6105 UHF/Microwave Power Transistors - Application Note |
RCA Solid State |
19922 |
RCA-2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
19923 |
RCA-2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
19924 |
RCA-2N6105 |
16- and 25-Watt Broadband Power Amplifiers Using RCA-2N5918, 2N5919, and 2N6105 UHF/Microwave Power Transistors - Application Note |
RCA Solid State |
19925 |
RCA-2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
19926 |
RCA3001 |
Microwave Amplifiers and Oscillators using RCA3000-Series Transistors - Application Note |
RCA Solid State |
19927 |
RCA3003 |
Microwave Amplifiers and Oscillators using RCA3000-Series Transistors - Application Note |
RCA Solid State |
19928 |
RCA3005 |
Microwave Amplifiers and Oscillators using RCA3000-Series Transistors - Application Note |
RCA Solid State |
19929 |
RCA9228 |
50A Complementary High-Current / NPN PNP Power Transistors |
Harris Semiconductor |
19930 |
RECOMMENDATIONS |
RF Silicon bipolar transistors general operational recommendations |
Philips |
19931 |
RFH35N08 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
19932 |
RFH35N10 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
19933 |
RFH45N05 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
19934 |
RFH45N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
19935 |
RFP15N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
19936 |
RFP15N12 |
N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
19937 |
RFP5P12 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
19938 |
RFP5P15 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
19939 |
RHU002N06 |
Transistors > MOS FET > Small Signal MOS FET |
ROHM |
19940 |
RJK2009DPM |
Transistors>Switching/MOSFETs |
Renesas |
19941 |
RK3055E |
Transistors > MOS FET > Power MOS FET |
ROHM |
19942 |
RK7002 |
Transistors > MOS FET > Small Signal MOS FET |
ROHM |
19943 |
RK7002A |
Transistors > MOS FET > Small Signal MOS FET |
ROHM |
19944 |
RPM-012PB |
Sensors > Phototransistors |
ROHM |
19945 |
RPM-075PT |
Sensors > Phototransistors |
ROHM |
19946 |
RPM-20PB |
Sensors > Phototransistors |
ROHM |
19947 |
RPM-22PB |
Sensors > Phototransistors |
ROHM |
19948 |
RPM-25PT |
Sensors > Phototransistors |
ROHM |
19949 |
RPT-34PB3F |
Sensors > Phototransistors |
ROHM |
19950 |
RPT-37PB3F |
Sensors > Phototransistors |
ROHM |
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