| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
MCR2935-5 |
PNPN thyristor (silicon controlled rectifier) designed for industrial and consumer applications 300V |
Motorola |
| 2012 |
MCR2935-6 |
PNPN thyristor (silicon controlled rectifier) designed for industrial and consumer applications 400V |
Motorola |
| 2013 |
MCR2935-7 |
PNPN thyristor (silicon controlled rectifier) designed for industrial and consumer applications 500V |
Motorola |
| 2014 |
MCR2935-8 |
PNPN thyristor (silicon controlled rectifier) designed for industrial and consumer applications 600V |
Motorola |
| 2015 |
MJE13009 |
Silicon NPN triple diffused transistor for industrial applications |
TOSHIBA |
| 2016 |
MN34081 |
Image Sensors for Industry and Sensing Use |
Panasonic |
| 2017 |
MN34210 |
Image Sensors for Industry and Sensing Use |
Panasonic |
| 2018 |
MN34219 |
Image Sensors for Industry and Sensing Use |
Panasonic |
| 2019 |
MN34220 |
Image Sensors for Industry and Sensing Use |
Panasonic |
| 2020 |
MN34229 |
Image Sensors for Industry and Sensing Use |
Panasonic |
| 2021 |
NTA1008 |
PNP silicon epitaxial transistor, high speed, high current switching for industrial use |
NEC |
| 2022 |
NTA1010 |
PNP silicon epitaxial transistor, high speed, high current switching for industrial use |
NEC |
| 2023 |
NTB707 |
PNP silicon epitaxial transistor, low frequency amplifier and low speed switching for industrial use |
NEC |
| 2024 |
NTB708 |
PNP silicon epitaxial transistor, low frequency amplifier and low speed switching for industrial use |
NEC |
| 2025 |
NTB794 |
PNP silicon epitaxial darlington transistor, low frequency amplifier and low speed switching for industrial use |
NEC |
| 2026 |
NTB795 |
PNP silicon epitaxial darlington transistor, low frequency amplifier and low speed switching for industrial use |
NEC |
| 2027 |
NTC1869 |
NPN silicon epitaxial MESA transistor, high speed, high current switching for industrial use |
NEC |
| 2028 |
NTC1870 |
NPN silicon epitaxial MESA transistor, high speed, high current switching for industrial use |
NEC |
| 2029 |
NTC1871A |
NPN silicon triple diffused MESA transistor, high speed, high current switching for industrial use |
NEC |
| 2030 |
NTC2334 |
NPN silicon epitaxial transistor, high speed, high current switching for industrial use |
NEC |
| 2031 |
NTC2335 |
NPN silicon triple diffused transistor, high speed, high current switching for industrial use |
NEC |
| 2032 |
NTD565 |
NPN silicon triple diffused darlington transistor, low frequency, for industrial use |
NEC |
| 2033 |
NTD568 |
NPN silicon epitaxial transistor, low frequency for industrial use |
NEC |
| 2034 |
NTD569 |
NPN silicon epitaxial transistor, low frequency for industrial use |
NEC |
| 2035 |
NTD987 |
NPN silicon triple diffused darlington transistor, high voltage, high current switching, for industrial use |
NEC |
| 2036 |
NTE517 |
Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven |
NTE Electronics |
| 2037 |
OM3105N |
Hybrid integrated circuits for inductive proximity detectors |
Philips |
| 2038 |
OM3105P |
Hybrid integrated circuits for inductive proximity detectors |
Philips |
| 2039 |
OM3115N |
Hybrid integrated circuits for inductive proximity detectors |
Philips |
| 2040 |
OM3115P |
Hybrid integrated circuits for inductive proximity detectors |
Philips |
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