| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
250UC11 |
Silicon alloy-diffused junction high-current rectifier 1600V 250A |
TOSHIBA |
| 2012 |
25CC13 |
Silicon diffused junction rectifier 25A 150V |
TOSHIBA |
| 2013 |
25CD13 |
Silicon diffused junction rectifier 25A 150V |
TOSHIBA |
| 2014 |
25FC13 |
Silicon diffused junction rectifier 25A 300V |
TOSHIBA |
| 2015 |
25FD13 |
Silicon diffused junction rectifier 25A 300V |
TOSHIBA |
| 2016 |
25FXF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 3000V 8kW |
TOSHIBA |
| 2017 |
25GC12 |
Silicon diffused junction rectifier 25A 400V |
TOSHIBA |
| 2018 |
25JC12 |
Silicon diffused junction rectifier 25A 600V |
TOSHIBA |
| 2019 |
25LC12 |
Silicon diffused junction rectifier 25A 800V |
TOSHIBA |
| 2020 |
25LF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 800V 12kW |
TOSHIBA |
| 2021 |
25NC12 |
Silicon diffused junction rectifier 25A 1000V |
TOSHIBA |
| 2022 |
25NF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1000V 12kW |
TOSHIBA |
| 2023 |
25QF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1200V 12kW |
TOSHIBA |
| 2024 |
2B56 |
High Accuracy, Thermocouple Cold Junction Compensator |
Intronics |
| 2025 |
2EZ100 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 2026 |
2EZ100 |
100 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2027 |
2EZ100 |
100 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 2028 |
2EZ11 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 2029 |
2EZ110 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 2030 |
2EZ110 |
110 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2031 |
2EZ110 |
110 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 2032 |
2EZ12 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 2033 |
2EZ120 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 2034 |
2EZ120 |
120 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2035 |
2EZ120 |
120 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 2036 |
2EZ13 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 2037 |
2EZ130 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 2038 |
2EZ130 |
130 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2039 |
2EZ130 |
130 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 2040 |
2EZ14 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
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