| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
2N5496 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6107 |
SESCOSEM |
| 2012 |
2N5555 |
JFET Switching |
ON Semiconductor |
| 2013 |
2N5555-D |
JFET Switching N-Channel - Depletion |
ON Semiconductor |
| 2014 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2015 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2016 |
2N5671 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 2017 |
2N5672 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 2018 |
2N5769 |
NPN Switching Transistor |
Fairchild Semiconductor |
| 2019 |
2N5771 |
PMP SILICON SWITCHING TRANSISTORS |
Central Semiconductor |
| 2020 |
2N5771 |
PMP SILICON SWITCHING TRANSISTORS |
Central Semiconductor |
| 2021 |
2N5771 |
PNP Switching Transistor |
Fairchild Semiconductor |
| 2022 |
2N5771_D26Z |
PNP Switching Transistor |
Fairchild Semiconductor |
| 2023 |
2N5771_D27Z |
PNP Switching Transistor |
Fairchild Semiconductor |
| 2024 |
2N5771_D74Z |
PNP Switching Transistor |
Fairchild Semiconductor |
| 2025 |
2N5771_D75Z |
PNP Switching Transistor |
Fairchild Semiconductor |
| 2026 |
2N5772 |
NPN Switching Transistor |
Fairchild Semiconductor |
| 2027 |
2N5772_D26Z |
PNP Switching Transistor |
Fairchild Semiconductor |
| 2028 |
2N5772_D75Z |
PNP Switching Transistor |
Fairchild Semiconductor |
| 2029 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2030 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2031 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2032 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2033 |
2N5910 |
PMP SILICON SWITCHING TRANSISTORS |
Central Semiconductor |
| 2034 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2035 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2036 |
2N6032 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
| 2037 |
2N6033 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
| 2038 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2039 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2040 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
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