| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
BUF634P |
250mA High-Speed Buffer |
Texas Instruments |
| 2012 |
BUF634PG4 |
250mA High-Speed Buffer 8-PDIP |
Texas Instruments |
| 2013 |
BUF634T |
250mA HIGH-SPEED BUFFER |
Burr Brown |
| 2014 |
BUF634T |
250mA High-Speed Buffer |
Texas Instruments |
| 2015 |
BUF634TG3 |
250mA High-Speed Buffer 5-TO-220 |
Texas Instruments |
| 2016 |
BUF634U |
250mA HIGH-SPEED BUFFER |
Burr Brown |
| 2017 |
BUF634U |
250mA High-Speed Buffer |
Texas Instruments |
| 2018 |
BUF634U/2K5 |
250mA High-Speed Buffer |
Texas Instruments |
| 2019 |
BUF634UE4 |
250mA High-Speed Buffer 8-SOIC |
Texas Instruments |
| 2020 |
BUF634U_2K5 |
250mA High-Speed Buffer |
Burr Brown |
| 2021 |
BXY43A |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
| 2022 |
BXY43B |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
| 2023 |
BXY43C |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
| 2024 |
BYW51-100 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 100V. |
General Electric Solid State |
| 2025 |
BYW51-150 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 150V. |
General Electric Solid State |
| 2026 |
BYW51-200 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 200V. |
General Electric Solid State |
| 2027 |
C30616 |
High-Speed InGaAs PIN Photodiodes |
PerkinElmer Optoelectronics |
| 2028 |
C30617 |
High-Speed InGaAs PIN Photodiodes |
PerkinElmer Optoelectronics |
| 2029 |
C30618 |
High-Speed InGaAs PIN Photodiodes |
PerkinElmer Optoelectronics |
| 2030 |
C30637 |
High-Speed InGaAs PIN Photodiodes |
PerkinElmer Optoelectronics |
| 2031 |
C4880-80-12A |
10-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
| 2032 |
C4880-80-14A |
10-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
| 2033 |
C4880-80-22A |
12-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
| 2034 |
C4880-80-24A |
12-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
| 2035 |
C8366 |
Supply voltage: +-18V; current-to-voltage conversionphotosensor amplifier for high-speed Si PIN photodiode |
Hamamatsu Corporation |
| 2036 |
CC2511 |
2.4 GHz Radio Transceiver, 8051 MCU, 16KB or 32KB Flash memory and full-speed USB interface 36-VQFN |
Texas Instruments |
| 2037 |
CC2511F16 |
2.4 GHz Radio Transceiver, 8051 MCU, 16 kB Flash memory and full-speed USB interface |
Texas Instruments |
| 2038 |
CC2511F16RSP |
2.4 GHz Radio Transceiver, 8051 MCU, 16KB or 32KB Flash memory and full-speed USB interface 36-VQFN |
Texas Instruments |
| 2039 |
CC2511F16RSPR |
2.4 GHz Radio Transceiver, 8051 MCU, 16KB or 32KB Flash memory and full-speed USB interface 36-VQFN |
Texas Instruments |
| 2040 |
CC2511F32 |
2.4 GHz Radio Transceiver, 8051 MCU, 32 kB Flash memory and full-speed USB interface |
Texas Instruments |
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