No. |
Part Name |
Description |
Manufacturer |
2011 |
2SC3346 |
Silicon NPN Epitaxial Type / High Current Switching Applications |
TOSHIBA |
2012 |
2SC3351-L |
For amplify low noise and high frequency. |
NEC |
2013 |
2SC3351-T1B |
For amplify low noise and high frequency. |
NEC |
2014 |
2SC3351-T2B |
For amplify low noise and high frequency. |
NEC |
2015 |
2SC3352 |
Power Transistor - Silicon NPN Triple-Diffused Junction Mesa Type |
Panasonic |
2016 |
2SC3352 |
Silicon NPN Power Transistors TO-220Fa package |
Savantic |
2017 |
2SC3352A |
Power Transistor - Silicon NPN Triple-Diffused Junction Mesa Type |
Panasonic |
2018 |
2SC3353 |
Power Transistor - Silicon NPN Triple-Diffused Junction Mesa Type |
Panasonic |
2019 |
2SC3353A |
Power Transistor - Silicon NPN Triple-Diffused Junction Mesa Type |
Panasonic |
2020 |
2SC3354 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
2021 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
2022 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
2023 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
2024 |
2SC3355-T |
For amplify low noise and high frequency |
NEC |
2025 |
2SC3356 |
MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) |
NEC |
2026 |
2SC3356-L |
For amplify low noise and high frequency |
NEC |
2027 |
2SC3356-T1B |
For amplify low noise and high frequency |
NEC |
2028 |
2SC3356-T2B |
For amplify low noise and high frequency |
NEC |
2029 |
2SC3356-VM |
For amplify low noise and high frequency |
NEC |
2030 |
2SC3357 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
2031 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
2032 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
2033 |
2SC3358 |
Silicon Transistor |
NEC |
2034 |
2SC3359S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
2035 |
2SC3360 |
HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
2036 |
2SC3360-L |
Silicon transistor |
NEC |
2037 |
2SC3360-T1B |
Silicon transistor |
NEC |
2038 |
2SC3360-T2B |
Silicon transistor |
NEC |
2039 |
2SC3361 |
NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications |
SANYO |
2040 |
2SC3365 |
Silicon NPN Transistor |
Hitachi Semiconductor |
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