| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
CM1508W |
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes) |
Panjit International Inc |
| 2012 |
CM150DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 2013 |
CM150DU-12F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 2014 |
CM150DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2015 |
CM150DU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 2016 |
CM150DU-12H |
Dual IGBTMOD 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 2017 |
CM150DU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 2018 |
CM150DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 2019 |
CM150DU-24F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 2020 |
CM150DU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 2021 |
CM150DU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2022 |
CM150DU-24H |
Dual IGBTMOD 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 2023 |
CM150DU-34KA |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
| 2024 |
CM150DU-34KA |
Dual IGBTMOD 150 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 2025 |
CM150DY-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 2026 |
CM150DY-12H |
HIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULES |
Mitsubishi Electric Corporation |
| 2027 |
CM150DY-12H |
Dual IGBTMOD 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 2028 |
CM150DY-12NF |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 2029 |
CM150DY-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 2030 |
CM150DY-24H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2031 |
CM150DY-24H |
Dual IGBTMOD 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 2032 |
CM150DY-28H |
Dual IGBTMOD 150 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 2033 |
CM150E3U-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 2034 |
CM150E3U-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 2035 |
CM150E3U-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2036 |
CM150E3U-12H |
Chopper IGBTMOD 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 2037 |
CM150E3U-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 2038 |
CM150E3U-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2039 |
CM150E3U-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 2040 |
CM150E3U-24H |
Chopper IGBTMOD 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
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