DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for E ULTRA

Datasheets found :: 2366
Page: | 64 | 65 | 66 | 67 | 68 | 69 | 70 | 71 | 72 |
No. Part Name Description Manufacturer
2011 MAX6728KAYHD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
2012 MAX6728KAYHD3-T Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2013 MAX6728KAYVD3-T Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2014 MAX6728KAZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2015 MAX6728KAZGD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
2016 MAX6728KAZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2017 MAX6728KAZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2018 MAX6728KAZWD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
2019 MAX6728KAZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2020 MAX6729 Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
2021 MAX6729KALTD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
2022 MAX6729KALTD3+T Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
2023 MAX6729KALTD3-T Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2024 MAX6729KAMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2025 MAX6729KAMSD3-T Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2026 MAX6729KARDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2027 MAX6729KARHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2028 MAX6729KARVD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
2029 MAX6729KARVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2030 MAX6729KARYD3-T Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2031 MAX6729KASDD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
2032 MAX6729KASDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2033 MAX6729KASFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2034 MAX6729KASHD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
2035 MAX6729KASHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2036 MAX6729KASVD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
2037 MAX6729KASVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2038 MAX6729KASYD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
2039 MAX6729KASYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
2040 MAX6729KATED3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor


Datasheets found :: 2366
Page: | 64 | 65 | 66 | 67 | 68 | 69 | 70 | 71 | 72 |



© 2024 - www Datasheet Catalog com