| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 2012 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 2013 |
2SB559 |
Low Frequency Power Amp, Medium Speed Switching Applications |
Unknow |
| 2014 |
2SB628 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
| 2015 |
2SB678 |
Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor |
TOSHIBA |
| 2016 |
2SB731 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 2017 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 2018 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 2019 |
2SB77 |
GERMANIUM PNP ALLOYED JUNCTION (LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT) |
Unknow |
| 2020 |
2SB903 |
30V/12A High-Speed Switching Applications |
SANYO |
| 2021 |
2SB904 |
PNP Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 2022 |
2SB919 |
PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 2023 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 2024 |
2SC103A |
High-Speed Switching Transistor |
TOSHIBA |
| 2025 |
2SC106 |
High-Speed Switching Transistor |
TOSHIBA |
| 2026 |
2SC107 |
High-Speed Switching Transistor |
TOSHIBA |
| 2027 |
2SC108 |
High-Speed Switching Transistor |
TOSHIBA |
| 2028 |
2SC109 |
High-Speed Switching Transistor |
TOSHIBA |
| 2029 |
2SC1096 |
NPN silicon transistor for audio frequency and low speed switching applications |
NEC |
| 2030 |
2SC1251 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 2031 |
2SC1252 |
2SC1252 |
Advanced Semiconductor |
| 2032 |
2SC13 |
High-Speed Switching Transistor |
TOSHIBA |
| 2033 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 2034 |
2SC14 |
High-Speed Switching Transistor |
TOSHIBA |
| 2035 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 2036 |
2SC1520 |
NPN Triple Diffued Silicon Transistor |
NEC |
| 2037 |
2SC1521 |
NPN Triple Diffued Silicon Transistor |
NEC |
| 2038 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 2039 |
2SC1621 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 2040 |
2SC1621R |
High Speed Switching NPN silicon epitaxial transistor |
NEC |
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